منابع مشابه
Electron Momentum and Spin Relaxation in Silicon Films
Semiconductor spintronics is promising, because it allows creating microelectronic elements which are smaller and consume less energy than present charge-based devices. Silicon is the main element of modern charge-based electronics, thus, understanding the peculiarities of spin propagation in silicon is the key for designing novel devices. We investigate the electron momentum and the spin relax...
متن کاملTheory of the spin relaxation of conduction electrons in silicon.
A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin relaxation over a wide temperature range, suppressing the significance of the intravalley spin-flip scattering, previously considered dominant, above roughly 120...
متن کاملBallistic Spin Field Effect Transistor Based on Silicon Nanowires
Submitted for the MAR11 Meeting of The American Physical Society Sorting Category: 17.9.5 (C) Ballistic Spin Field Effect Transistor Based on Silicon Nanowires1 DMITRI OSINTSEV, VIKTOR SVERDLOV, ZLATAN STANOJEVIC, SIEGFRIED SELBERHERR, Institute for Microelectronics, TU Wien — We investigate the properties of ballistic spin fieldeffect transistors build on silicon nanowires. An accurate descrip...
متن کاملDefects in silicon nanowires
Defects in silicon nanowires have been investigated using the electron spin resonance ESR method. The ESR signals consist of three features: a strong resonance at g=2.002 49, a weak line at g=2.000 48, and a broad feature at g=2.005 41. From the saturation behavior and oxidation-related and temperature dependence analysis, we ascribe that the strong resonance corresponds to the EX center and th...
متن کاملElectron spin-phonon interaction symmetries and tunable spin relaxation in silicon and germanium
Compared with direct-gap semiconductors, the valley degeneracy of silicon and germanium opens up new channels for spin relaxation that counteract the spin degeneracy of the inversion-symmetric system. Here the symmetries of the electron-phonon interaction for silicon and germanium are identified and the resulting spin lifetimes are calculated. Room-temperature spin lifetimes of electrons in sil...
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ژورنال
عنوان ژورنال: Journal of Computational and Theoretical Nanoscience
سال: 2012
ISSN: 1546-1955,1546-1963
DOI: 10.1166/jctn.2012.2617